
Introduction:主要用于高纯化合物在真空或惰性气氛中的煅烧、半导体薄膜的烧结或铺展、陶瓷材料的烧结等。
Temperature Range
1100°C/1400°C/1700°C
Door Opening Style
Side/ Top/ Bottom/ Bottom-lift/ Bogie
Process Applications
Sintering / Brazing / Heat Treatment
Heating Elements & Temp Zones
Resistance wire/ SiC/ MoSi₂
Single/ Multi-zones
Chamber Size
Standard / Custom
Custom Service Process
